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Related papers by collaborating authors and other groups:

 

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PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
M.
Rasp, Th.L. Straubinger, E. Schmitt, M. Bickermann, S. Reshanov and H. Sadowski, 
Mat. Science Forum 433-436 (2003) 55
[PDF]

 
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Development of Large Diameter High-Purity Semi-insulating 4H-SiC Wafers for Microwave Devices
J. R. Jenny, D. P. Malta, M. R. Calus, St. G. Müller, A. R. Powell, V. F. Tsvetkov, H. McD. Hobgood, R. C. Glass and C. H. Carter, Jr, Materials Science Forum Vols. 457-460 (2004) 35 [PDF]

 

 
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Last modification: 24/06/19