The
technology to grow bulk, semi-insulating SiC and GaN single crystals is highly
demanding. Different approaches are pursued and material quality is improving at
a rapid pace. In order to obtain reproducible resistivity values, the
compensation process and the resulting activation energy must be tightly
controlled. The most convenient way to do this is to measure resistivity at
Variable Temperature and to construct an Arrhenius plot.
Also,
SiC and GaN substrate customers generally request a minimum resistivity at a
specified elevated temperature, to be verified by the vendor.
COREMA – VT has been developed to meet these demands. A fully automated
temperature adjustment, resistivity measurement and Arrhenius plot data
evaluation procedure is provided. As usual, the procedure is non-destructive and
noncontact. The measurement time is determined by the temperature scanning.
